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| Preliminary data HITFET(R)BSP 78 Smart Lowside Power Switch Features * Logic Level Input * Input Protection (ESD) * Thermal shutdown with auto restart * Overload protection * Short circuit protection * Overvoltage protection * Current limitation Product Summary Drain source voltage V DS 40 50 3 500 V m A mJ On-state resistance Nominal load current Clamping energy R DS(on) ID(Nom) EAS * Analog driving possible Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart SIPMOS(R) technology. Fully protected by embedded protection functions. General Description Pin 1 2 3 TAB Symbol IN DRAIN SOURCE DRAIN Function Input Output to the load Ground Output to the load Semiconductor Group Page 1 Jan-15-1998 Preliminary data BSP 78 Block Diagram Vb b + LOAD M Drain C u rrent lim i t a t i o n G a te-Driving Overvoltage protection IN U n it ESD Overload protection Overtemperature protection Short c rcu t S h o r t c ii r c u ii t p rro tte c ttiio n p o ec on Source H ITFET (R) Semiconductor Group Page 2 Jan-15-1998 Preliminary data Maximum Ratings at T j = 25C, unless otherwise specified Parameter Drain source voltage BSP 78 Symbol V DS Value 40 40 -0.2 ... +10 -0.2 ... VDS -40 ...+150 -55 ...+150 1.7 500 2000 Unit V Drain source voltage for short circuit protection Continuous input voltage Peak input voltage (IIN 2 mA) Operating temperature Storage temperature VDS(SC) VIN VIN(peak) Tj Tstg P tot C W mJ kV Power dissipation, TC = 85 C Unclamped single pulse inductive energy F) EAS Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 E 40/150/56 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - ambient: @ min. footprint @ 6 cm2 cooling area F) junction-soldering point: R thJS RthJA K/W 125 72 17 K/W 1 not tested, specified by design on 50mm+50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for Drain connection. PCB is vertical without blown air. 2 Device Semiconductor Group Page 3 Jan-15-1998 Preliminary data Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, Imess = 10 mA Off-state drain currentTj = -40 ... +150C VIN = 0 V, VDS = 32 V Input treshold voltage ID = 0.7 mA On state input current On-state resistance ID = 3 A, VIN = 5 V, Tj = 25 C ID = 3 A, VIN = 5 V, Tj = 150 C On-state resistance ID = 3 A, VIN = 10 V, Tj = 25 C ID = 3 A, VIN = 10 V, Tj = 150 C Nominal load current VDS = 0.5 V, TS = 85 C, Tj < 150C, BSP 78 Symbol min. VDS(AZ) IDSS VIN(th) IIN(on) R DS(on) R DS(on) ID(Nom) 3 40 1.3 - Values typ. 1.7 10 45 75 35 65 max. 55 10 2.2 30 60 120 50 100 - Unit V A V A m A VIN = 10 V Current limit (active if VDS>2.5 V) VIN = 10 V, VDS = 12 V Dynamic Characteristics Turn-on time VIN to 90% ID: ton toff -dVDS /dton dVDS /dtoff 60 60 0.4 0.7 150 150 1 1 V/s s ID(lim) 16 24 32 A RL = 5 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 5 , VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 5 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 5 , VIN = 10 to 0 V, Vbb = 12 V Semiconductor Group Page 4 Jan-15-1998 Preliminary data Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Protection Functions Thermal overload trip temperature Thermal hysteresis Input current protection mode Unclamped single pulse inductive energy F) ID = 3 A, Tj = 25 C, Vbb = 12 V ID = 3 A, Tj = 150 C, Vbb = 12 V Tjt Tjt IIN(Prot) EAS 500 300 150 165 10 300 Symbol min. Values typ. max. BSP 78 Unit C K A mJ Inverse Diode Continuous source drain voltage VIN = 0 V, -ID = 5*3 A, tP = 300 s VSD 1.1 V 1 not tested, specified by design Semiconductor Group Page 5 Jan-15-1998 Preliminary data BSP 78 Block diagram Terms Inductive and overvoltage output clamp Input circuit (ESD protection) Short circuit behaviour V IN Gate Drive Input I IN t I D t Source/ Ground Input is not designed for DC current > 2 mA T t j Thermal hysteresis t Semiconductor Group Page 6 Jan-15-1998 Preliminary data Maximum allowable power dissipation Ptot = f(TC) 1.7 W 1.4 BSP 78 On-state resistance R ON = f(T j); I D=3A; V IN=10V 120 m 100 90 RDS(on) 80 max. Ptot 1.2 1.0 0.8 70 60 50 typ. 0.6 0.4 40 30 20 0.2 10 0.0 -50 -25 0 25 50 75 100 C 150 0 -40 -15 10 35 60 85 110 135 C 185 TC Tj On-state resistance R ON = f(T j); ID=3A; V IN=5V Typ. input threshold voltage VIN(th) = f(T j); ID=-; V DS=12V 2.0 V max. 140 m 120 RDS(on) 110 100 90 80 70 60 50 40 30 20 10 0 -40 -15 10 35 60 85 110 135 C 185 0.0 -50 -25 0 25 50 75 100 C 150 0.5 0.8 typ. 1.0 VIN(th)1.5 1.2 0.2 Tj Tj Semiconductor Group Page 7 Jan-15-1998 Preliminary data Typ. transfer characteristics ID = f(VIN); VDS=12V; Tj=25C 30 BSP 78 Typ. short circuit current ID(SC) = f(Tj); VDS=12V Parameter: V IN 30 A A ID 20 ID 20 Vin=10V 15 15 5V 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 10 0 -40 -15 10 35 60 85 110 135 C 185 VIN Tj Typ. output characteristic ID = f(VDS); Tj=25C Parameter: V IN 35 10V A 7V Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 40 A -40C ID 25 6V 5V 4V ID(lim) 30 25 20 20 15 15 10 Vin=3V 10 5 150C 85C 5 25C 0 0 1 2 3 4 V 6 0 0.0 0.5 1.0 1.5 2.0 s t 3.0 VDS Semiconductor Group Page 8 Jan-15-1998 Preliminary data Typ. off-state drain current IDSS = f(Tj) 10 A 8 BSP 78 Transient thermal impendance ZthJC = f(tP) Parameter: D=t P/T max. 10 2 K/W D=0.5 0.2 10 1 0.1 0.05 0.02 10 0 IDSS ZthJA 7 6 5 4 3 2 1 0 -40 10 -2 typ. 10 -1 0.01 0 -15 10 35 60 85 110 135 C 185 10 -3 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 s 10 3 Tj tP Semiconductor Group Page 9 Jan-15-1998 Preliminary data BSP 78 Package and ordering code all dimensions in mm Ordering code: Q67060-S7203-A2 Semiconductor Group Page 10 Jan-15-1998 |
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